technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com high reliability silicon power rectifier qualified per mil-prf-19500/246 ? glass passivated die ? glass to metal header construction ? vrrm to 1000v ? 1600 amps surge rating t4-lds-0142 rev. 1 (091785) page 1 of 3 devices levels 1n3289 1n3294 1n3289r 1n3294r jan 1n3291 1n3295 1n3291r 1n3295r jantx 1n3293 1N3293R jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit peak repetitive reverse voltage 1n3289 1n3291 1n3293 1n3294 1n3295 1n3289r 1n3291r 1N3293R 1n3294r 1n3295r v rwm 200 400 600 800 1000 v average forward current, t c = 134 i f 100 a peak surge forward current @ t p = 8.3ms, half sinewave, t c = 150c i fsm 1600 a thermal resistance, junction to case r jc 0.4 c/w operating case temperature range t j -65c to 200c c storage temperature range t stg -65c to 200c c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit forward voltage i fm = 310a, t c = 25c * v fm 1.55 v reverse current v rm = 200, t c = 25c v rm = 400, t c = 25c v rm = 600, t c = 25c v rm = 800, t c = 25c v rm = 1000, t c = 25c 1n3289 1n3291 1n3293 1n3294 1n3295 1n3289r 1n3291r 1N3293R 1n3294r 1n3295r i rm 10 ma reverse current v rm = 200, t c = 200c v rm = 400, t c = 200c v rm = 600, t c = 200c v rm = 800, t c = 200c v rm = 1000, t c = 200c 1n3289 1n3291 1n3293 1n3294 1n3295 1n3289r 1n3291r 1N3293R 1n3294r 1n3295r i rm 30 ma * pulse test: pulse width 300 sec. duty cycle 2% note: do-205aa (do-8)
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com high reliability silicon power rectifier t4-lds-0142 rev. 1 (091785) page 2 of 3 graphs figure 3 forward current derating figure 1 typical forward characteristics figure 5 transient thermal impedance figure 2 typical reverse characteristics figure 7 maximum nonrepetitive surge current
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com high reliability silicon power rectifier t4-lds-0142 rev. 1 (091785) page 3 of 3 package dimensions dimensions symbol inches millimeters notes min max min max cd .625 1.000 15.88 25.40 8 cd 1 .500 12.70 ch 1.750 44.45 ch 1 1.140 28.96 c .050 .120 1.27 3.05 fl .300 .450 7.62 11.43 6 fw .670 17.02 hf 1.031 1.063 26.19 27.00 ht .125 .500 3.18 12.70 5 oal 4.300 5.065 109.22 128.65 sd 4 sl .605 .645 15.37 16.38 ud .343 .373 8.71 9.47 t .250 .310 6.35 7.87 4 notes: 1. dimensions are in inches. 2. millimeter equivalents are given for general information only. 3. complete threads to extend to within 2.5 threads of seating plane. 4. 375-24 unf-2a. maximum pitch diameter of plated threads shall be basic pitch diameter (.3479 inch (8.837 mm) reference. 5. a chamfer or undercut on one or both ends of hexagonal portions is optional. 6. minimum flat. 7. for marking (see 3.5). 8. the body of the device, with the exception of the hexagon and flexible lead extensions, lies within cyclinder defined by cd 1 and ch, cd 1 not to exceed actual hf. 9. terminal shape is optional. 10. in accordance with asme y14.5m, diameters are equivalent to x symbology. physical dimensions
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